# A mempolar transistor made from tellurium

Preprint · Yifei Yang, Lujie Xu, Mingkun Xu, Huan Liu, Dameng Liu, Wenrui Duan, Jing Pei, Huanglong Li

- Archive id: arxiv:2301.01986
- Published: 2023-01-05
- arXiv: https://arxiv.org/abs/2301.01986
- Citations: 0
- Source URL: https://arxiv.org/abs/2301.01986
- PDF: https://arxiv.org/pdf/2301.01986
- Provenance: arxiv

## Abstract

The classic three-terminal electronic transistors and the emerging two-terminal ion-based memristors are complementary to each other in various nonconventional information processing systems in a heterogeneous integration approach, such as hybrid CMOS/memristive neuromorphic crossbar arrays. Recent attempts to introduce transitive functions into memristors have given rise to gate-tunable memristive functions, hetero-plasticity and mixed-plasticity functions. However, it remains elusive under what application scenarios and in what ways transistors can benefit from the incorporation of ion-based memristive effects. Here, we introduce a new type of transistor named 'mempolar transistor' to the transistor family. Its polarity can be converted reversibly, in a nonvolatile fashion, between n-type and p-type depending on the history of the applied electrical stimulus. This is achieved by the use of the emerging semiconducting tellurium as the electrochemically active source/drain contact material, in combination with monolayer two-dimensional MoS2 channel, which results in a gated lateral Te/MoS2/Te memristor, or from a different perspective, a transistor whose channel can be converted reversibly between n-type MoS2 and p-type Te. With this unique mempolar function, our transistor holds the promise for reconfigurable logic circuits and secure circuits. In addition, we propose and demonstrate experimentally, a ternary content-addressable memory made of only two mempolar transistors, which used to require a dozen normal transistors, and by simulations, a device-inspired and hardware matched regularization method 'FlipWeight' for training artificial neural networks, which can achieve comparable performance to that achieved by the prevalent 'Dropout' and 'DropConnect' methods. This work represents a major advance in diversifying the functionality of transistors.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

---
Space Kitty Archive · https://space-kitty.com · API: https://space-kitty.com/api/v1 · MCP: https://space-kitty.com/mcp · Premium: $0.20/request via x402 (Base Sepolia (testnet)). Metadata: arXiv (CC0), OpenAlex (CC0), Europe PMC (CC BY/CC0 works), ClinicalTrials.gov.