# Self-doped Molecular Mott Insulator for Bilayer High-Temperature Superconducting La3Ni2O7

Preprint · Zhan Wang, Heng-Jia Zhang, Kun Jiang, Fu-Chun Zhang

- Archive id: arxiv:2412.18469
- Published: 2024-12-24
- Venue: National Science Review 12, nwaf353 (2025)
- DOI: https://doi.org/10.1093/nsr/nwaf353
- arXiv: https://arxiv.org/abs/2412.18469
- Source URL: https://arxiv.org/abs/2412.18469
- PDF: https://arxiv.org/pdf/2412.18469
- Provenance: arxiv

## Abstract

The bilayer structure of recently discovered high-temperature superconducting nickelates La$\_3$Ni$\_2$O$\_7$ provides a new platform for investigating correlation and superconductivity. Starting from a bilayer Hubbard model, we show that there is a molecular Mott insulator limit formed by the bonding band owing to Hubbard interaction $U$ and large interlayer coupling. This molecular Mott insulator becomes self-doped due to electrons transferred to the antibonding bands at a weaker interlayer coupling strength. The self-doped molecular Mott insulator is similar to the doped Mott insulator studied in cuprates. We propose La$\_3$Ni$\_2$O$\_7$ to be a self-doped molecular Mott insulator, whose molecular Mott limit is formed by two nearly degenerate antisymmetric $d\_{x^2-y^2}$ and $d\_{z^2}$ orbitals. Partial occupation of higher energy symmetric $d\_{x^2-y^2}$ orbital leads to self-doping, which may be responsible for high-temperature superconductivity in La$\_3$Ni$\_2$O$\_7$. The effects of Hund's coupling $J\_H$ on the low-energy spectra are also studied via exact diagonalization. The proposed low-energy theory for La$\_3$Ni$\_2$O$\_7$ is found to be valid in a wide range of $U$ and $J\_H$.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

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