# 2T1R Regulated Memristor Conductance Control Array Architecture for Neuromorphic Computing using 28nm CMOS Technology

Preprint · Neethu Kuriakose, Arun Ashok, Christian Grewing, André Zambanini, Stefan van Waasen

- Archive id: arxiv:2505.12830
- Published: 2025-05-19
- arXiv: https://arxiv.org/abs/2505.12830
- Source URL: https://arxiv.org/abs/2505.12830
- PDF: https://arxiv.org/pdf/2505.12830
- Provenance: arxiv

## Abstract

Memristors are promising devices for scalable and low power, in-memory computing to improve the energy efficiency of a rising computational demand. The crossbar array architecture with memristors is used for vector matrix multiplication (VMM) and acts as kernels in neuromorphic computing. The analog conductance control in a memristor is achieved by applying voltage or current through it. A basic 1T1R array is suitable to avoid sneak path issues but suffer from wire resistances, which affects the read and write procedures. A conductance control scheme with a regulated voltage source will improve the architecture and reduce the possible potential divider effects. A change in conductance is also possible with the provision of a regulated current source and measuring the voltage across the memristors. A regulated 2T1R memristor conductance control architecture is proposed in this work, which avoids the potential divider effect and virtual ground scenario in a regular crossbar scheme, as well as conductance control by passing a regulated current through memristors. The sneak path current is not allowed to pass by the provision of ground potential to both terminals of memristors.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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