# Prediction of Alpha-Particle-Immune Gate-All-Around Field-Effect Transistors (GAA-FET) Based SRAM Design

Article · Albert Lu, Reza Arghavani, Hiu Yung Wong

- Archive id: arxiv:2507.15860
- Published: 2025-06-29
- Venue: International Conference on Simulation of Semiconductor Processes and Devices
- DOI: https://doi.org/10.1109/sispad66650.2025.11186320
- arXiv: https://arxiv.org/abs/2507.15860
- Citations: 1
- Source URL: https://arxiv.org/abs/2507.15860
- PDF: https://arxiv.org/pdf/2507.15860
- Provenance: arxiv

## Abstract

In this paper, using 3D Technology Computer-Aided-Design (TCAD) simulations, we show that it is possible to design a static random-access memory (SRAM) using gate-all-around field-effect-transistor (GAA-FET) technology so that it is immune to single alpha particle radiation error. In other words, with the design, there will be no single-event upset (SEU) due to alpha particles. We first use ab initio calculations in PHITS to show that there is a maximum linear energy transfer (LET), LETmax, for the alpha particle in Si and Si$\_x$Ge$\_{1-x}$. Based on that, by designing a sub-7nm GAA-FET-based SRAM with bottom dielectric isolation (BDI), we show that the SRAM does not flip even if the particle strike is in the worst-case scenario.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

Cited in dossiers:
- [Semiconductor Device Frontiers: State of the Field (October 2026)](https://space-kitty.com/dossiers/semiconductor-frontiers)

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