# Electrical Control of Excitons in Bare-MoSe2 and MoSe2/NbSe2 Heterostructure

Preprint · Atanu Patra, Vishakha Kaushik, Ali Sepas, Subhamoy Sahoo, Mathias Federolf, Christian G. Mayer, Sebastian Klembt, Monika Emmerling, Simon Betzold, Seth Ariel Tongay, Fabian Hartmann, Thomas Garm Pedersen, Sven Höfling

- Archive id: arxiv:2508.21781
- Published: 2025-08-29
- Venue: ACS Nano 20 (18), 13958-13967, 2026
- DOI: https://doi.org/10.1021/acsnano.6c04866
- arXiv: https://arxiv.org/abs/2508.21781
- Source URL: https://arxiv.org/abs/2508.21781
- PDF: https://arxiv.org/pdf/2508.21781
- Provenance: arxiv

## Abstract

Monolayer transition metal dichalcogenides (TMDCs) are promising materials for next-generation optoelectronic devices, owing to their strong excitonic responses and atomic thickness. Controlling their light emission electrically is a crucial step towards realizing practical nanoscale optoelectronic devices such as light-emitting diodes and optical modulators. However, photoluminescence (PL) quenching in van der Waals TMDC/metal heterostructures, caused by ultrafast interlayer charge or energy transfer, impedes such electrical modulation. Here, we investigate monolayer-MoSe2/bulk-NbSe2 heterostructures and demonstrate that a vertical electric field can effectively recover the PL intensity up to ~ 80% of bare-MoSe2. Furthermore, our analysis reveals that the room temperature PL intensity can be tuned by nearly three orders of magnitude in bare-MoSe2 and by about one order of magnitude in MoSe2/NbSe2 heterostructures. First-principles calculations incorporating spin-orbit coupling reveal that the perpendicular electric fields drive a transition from a direct to an indirect bandgap, fundamentally altering the optical response in the heterostructure. Unlike bare-MoSe2, the heterostructure exhibits a pronounced thermal dependence of the enhancement factor, implying that exciton lifetime dominates over interfacial transfer processes. Our findings demonstrate reversible, electric-field-driven PL control at a TMDC/metal interface, providing a pathway to electrically tunable light emission and improved contact engineering in two-dimensional optoelectronic devices.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

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