# Quench rate dependence of center formation in Er implanted Si

Preprint · Mark A. Hughes, Huan Liu, Yaping Dan

- Archive id: arxiv:2510.17779
- Published: 2025-10-20
- arXiv: https://arxiv.org/abs/2510.17779
- Source URL: https://arxiv.org/abs/2510.17779
- PDF: https://arxiv.org/pdf/2510.17779
- Provenance: arxiv

## Abstract

Er implanted Si (Er:Si) is a promising candidate for scalable planar quantum memory (QM) applications. Er has a preference to coordinate with O impurities, and multiple types of Er center are typically formed after a post implant anneal. Float zone Si was implanted with 1018 cm-3 Er and separate samples were annealed using a rapid quench annealing technique at 950 degC for 10 min with quench rates of 5, 23, 46, 93, 185 and 400 degC/s. The evolution of photoluminescence (PL) peaks and their associated Er centers was tracked as a function of quench rate. Across all samples, five distinct Er centers were identified. Two centers, one with mixed Si and O coordination and one with Si-only coordination, exhibited fully resolved crystal-field splitting of the 4I15/2 ground state together with 2 to 3 hot lines from the 4I13/2 excited state; fitting of crystal-field parameters for both was consistent with C2v symmetry. The mixed Si and O coordinated center was suppressed at quench rates above 185 degC/s, while the Si-only coordinated center was progressively enhanced with increasing quench rate up to the maximum of 400 degC/s. These results demonstrate that rapid quench annealing has the potential to selectively stabilize a single, Si-coordinated Er center in Er:Si, which is required for QM applications.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

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