# Device-Scale Atomistic Simulations of Heat Transport in Advanced Field-Effect Transistors

Preprint · Ke Xu, Gang Wang, Ting Liang, Yang Xiao, Dongliang Ding, Haichang Guo, Xiang Gao, Lei Tong, Xi Wan, Gang Zhang, Jianbin Xu

- Archive id: arxiv:2511.18915
- Published: 2025-11-24
- arXiv: https://arxiv.org/abs/2511.18915
- Citations: 0
- Source URL: https://arxiv.org/abs/2511.18915
- PDF: https://arxiv.org/pdf/2511.18915
- Provenance: arxiv

## Abstract

Self-heating in next-generation, high-power-density field-effect transistor limits performance and complicates fabrication. Here, we introduce NEP-FET, a machine-learned framework for device-scale heat transport simulations of field-effect transistors. Built upon the neuroevolution potential, the model extends a subset of the OMat24 dataset through an active-learning workflow to generate a chemically diverse, interface-rich reference set. Coupled with the FETMOD structure generator module, NEP-FET can simulate realistic field-effect transistor geometries at sub-micrometer scales containing millions of atoms, and delivers atomistic predictions of temperature fields, per-atom heat flux, and thermal stress in device structures with high fidelity. This framework enables rapid estimation of device-level metrics, including heat-flux density and effective thermal conductivity. Our results reveal pronounced differences in temperature distribution between fin-type and gate-all-around transistor architectures. The framework closes a key gap in multiscale device modeling by combining near-quantum-mechanical accuracy with device-scale throughput, providing a systematic route to explore heat transport and thermo-mechanical coupling in advanced transistors.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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