# Investigation of filamentation in a-Si/Ag/Cu memristors with atomic force microscope

Preprint · Alena Samsonova, Viacheslav Dremov, Oleg Klimenko, Nikolai Brilliantov, Vladimir N. Antonov

- Archive id: arxiv:2605.02432
- Published: 2026-05-04
- arXiv: https://arxiv.org/abs/2605.02432
- Citations: 0
- Source URL: https://arxiv.org/abs/2605.02432
- PDF: https://arxiv.org/pdf/2605.02432
- Provenance: arxiv

## Abstract

Cation-based Ag/Cu filaments formed in an insulating $α$-Si matrix are widely used as memristors in crossbar arrays for efficient in-memory computing. However, the stochastic nature of filament formation and rupture gives rise to device-to-device and cycle-to-cycle variation. Despite successful implementation of large-scale memristor arrays, systematic studies of filament parameters and their spatial distribution in the memristors are scarce. In this work, we use conductive atomic force microscopy (c-AFM) to probe the spatial distribution of conductive filaments in $α$-Si memristors. The charge transport is dominated by a limited number of discrete filaments rather than by uniform conduction across the device area. The systematic analysis of the experiment gives the mean surface density of the conductive filaments $\\sim$3200 per $μ\\text{m}^2$. Both volatile and non-volatile filaments can be found within one memristor. The experimental data and the nature of volatile and non-volatile filaments may be explained within the model of multiple trap assisted tunnelling. The model yields reasonable estimates for physical properties for both types of filaments.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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