# Valley-Landscape Engineering in Bilayer WSe$_2$ Gate-All-Around Transistors

Preprint · Katsunori Wakabayashi, Souren Adhikary, Kazuhito Tsukagoshi

- Archive id: arxiv:2606.08955
- Published: 2026-06-08
- arXiv: https://arxiv.org/abs/2606.08955
- Citations: 0
- Source URL: https://arxiv.org/abs/2606.08955
- PDF: https://arxiv.org/pdf/2606.08955
- Provenance: arxiv

## Abstract

The K-$Γ$ valence-band splitting $Δ\_{KΓ}$ that governs hole transport in few-layer WSe$\_2$ is not a fixed material constant. It is tuned by interlayer stacking, strain, pressure, and the dielectric and displacement-field environment. Its computed value also depends on the level of electronic-structure theory. Bilayer WSe$\_2$ therefore realizes a tunable multivalley landscape rather than a single operating point. We combine first-principles inputs with an analytical two-valley device model for gate-all-around (GAA) field-effect transistors, and obtain three results. (i) The minimum subthreshold swing stays near the thermionic limit of $60$~mV~dec$^{-1}$ independently of layer number, because well below threshold the quantum capacitance remains far below the oxide capacitance. (ii) The effective mobility is set by the K-to-$Γ$ occupation ratio: valley redistribution is strong when $Δ\_{KΓ}$ is of order $k\_BT$ and fades toward single-valley $K$ transport as the splitting grows. (iii) In this small-splitting regime, biaxial strain tunes the effective mobility - and hence the on-current - through the valley population while the subthreshold swing stays at the thermionic limit, decoupling mobility control from electrostatic switching in a way distinct from scattering-based strategies. A symmetric GAA gate controls carrier density at essentially fixed splitting, and because an out-of-plane field increases $Δ\_{KΓ}$, its midplane-symmetric potential avoids driving the channel out of the small-splitting regime. The design principle has two facets: small $Δ\_{KΓ}$ - set by layer number, stacking, strain, and dielectric engineering - maximizes the valley tunability of $μ\_\\mathrm{eff}$, whereas larger $Δ\_{KΓ}$, for example through compressive strain, suppresses the heavy $Γ$ valley and maximizes the on-state mobility.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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