# Realization of Very High Mobility InAs Quantum Wells on InP Substrates Through Convex InAlAs Graded Buffer Optimization

Preprint · Tyler Lindemann, Rojila Ghimire, Alejandro Alcaraz Ramirez, Ahmad Azizimanesh, Sergei Gronin, Ray Kallaher, Michael J. Manfra

- Archive id: arxiv:2609.28795
- Published: 2026-09-23
- arXiv: https://arxiv.org/abs/2609.28795
- Citations: 0
- Source URL: https://arxiv.org/abs/2609.28795
- PDF: https://arxiv.org/pdf/2609.28795
- Provenance: arxiv

## Abstract

Due to strong spin-orbit coupling, large Landé $g$-factor, and a highly transparent interface, the two-dimensional electron gas (2DEG) in InAs quantum wells provides an ideal platform for the exploration of topological superconductivity in hybrid semiconductor-superconductor heterostructures. Reduction of disorder in the semiconductor remains a primary challenge to the disambiguation of subtle interaction effects. Here we demonstrate very high mobility InAs 2DEGs grown on insulating InP substrates. Utilizing a convex compositional grading profile in an InAlAs metamorphic buffer we demonstrate InAs quantum wells with thickness greater than 10 nm without need of Ga-containing cladding layers. We examine structural and electrical transport properties of these heterostructures. Advances in the design of the metamorphic InAlAs buffer result in low-temperature electron mobility exceeding $1.7\\times10^6$ cm$^2$ V$^{-1}$ s$^{-1}$ at 2DEG density $\\leq3.2\\times10^{11}$ cm$^{-2}$, the highest value yet reported for this material system.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Topological Superconductivity & Majorana Modes](https://space-kitty.com/topics/topological-superconductivity)

---
Space Kitty Archive · https://space-kitty.com · API: https://space-kitty.com/api/v1 · MCP: https://space-kitty.com/mcp · Premium: $0.20/request via x402 (Base Sepolia (testnet)). Metadata: arXiv (CC0), OpenAlex (CC0), Europe PMC (CC BY/CC0 works), ClinicalTrials.gov.