# Multiscale modelling of nanoscaled FETs based on 2D ferroelectric materials

Preprint · Alejandro Toral-Lopez, Michele Virgilio, Gianluca Fiori, Damiano Marian

- Archive id: arxiv:2609.37823
- Published: 2026-09-29
- arXiv: https://arxiv.org/abs/2609.37823
- Citations: 0
- Source URL: https://arxiv.org/abs/2609.37823
- PDF: https://arxiv.org/pdf/2609.37823
- Provenance: arxiv

## Abstract

Ferroelectric materials are highly attractive for low-power, high-speed electronics and emerging neuromorphic computing architectures. However, the severe physical scaling limits of conventional bulk (3D) ferroelectrics at the nanoscale have shifted attention towards two-dimensional (2D) ferroelectric monolayers. Accurate device-level performance predictions are essential to accelerate the experimental testing and screening of these novel materials. In this work, we present a multiscale simulation framework that bridges first-principles density functional theory with Non-Equilibrium Green's Function (NEGF) transport calculations. Using a 2D Indium Phosphide monolayer as a case study, our approach leverages a continuously interpolated, polarization-dependent Hamiltonian embedded within a self-consistent Poisson-NEGF solver. The model captures the dynamic interplay between ion movement and electronic transport, naturally reproducing macroscopic hysteresis loops and memory windows without empirical parameters. This predictive pipeline provides a computationally efficient tool to evaluate and optimize next-generation 2D ferroelectric field-effect transistors.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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