# Multi-Branch Transport in a Back-gated WS$_2$ Transistor at Deep-Cryogenic Temperature

Preprint · Megan Powell, Vilas Patil, Hazel Neill, Stephen O'Sullivan, Paul K. Hurley, Lida Ansari, Farzan Gity, Alessandro Rossi

- Archive id: arxiv:2609.39878
- Published: 2026-09-30
- arXiv: https://arxiv.org/abs/2609.39878
- Citations: 0
- Source URL: https://arxiv.org/abs/2609.39878
- PDF: https://arxiv.org/pdf/2609.39878
- Provenance: arxiv

## Abstract

Two-dimensional materials are promising candidates for electronic applications beyond the operating limits of conventional semiconductor technologies. Within this class, transition-metal dichalcogenides offer attractive properties for field-effect transistor operation, with tungsten disulphide (WS$\_2$) emerging as a particularly promising material for operation at cryogenic temperatures. Here, we investigate the electrical performance of a back-gated multilayer WS$\_2$ transistor at deep cryogenic temperature, down to 20 mK. The device remains strongly gate-tunable throughout the cryogenic regime, with an effective on/off current ratio exceeding $10^{5}$. Most notably, the low-temperature turn-on characteristics exhibit reproducible shoulder-like features, which we describe using a phenomenological model comprising multiple effective conduction branches operating in parallel.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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