# Layer-by-layer growth of highly aligned MoS$_2$ nanoribbon arrays

Preprint · Kaichi Yamamoto, Pablo Solís-Fernández, Haiming Sun, Yanlin Gao, Yeri Lee, Yushan Tseng, Aika Uchida, Masahiro Hara, Sunmin Ryu, Yung-Chang Lin, Susumu Okada, Kazu Suenaga, Hiroki Ago

- Archive id: arxiv:2610.00987
- Published: 2026-10-01
- arXiv: https://arxiv.org/abs/2610.00987
- Citations: 0
- Source URL: https://arxiv.org/abs/2610.00987
- PDF: https://arxiv.org/pdf/2610.00987
- Provenance: arxiv

## Abstract

One-dimensional transition metal dichalcogenides (TMD) nanoribbons (NRs) offer a promising route to aggressive channel-width scaling in nanoscale transistors. However, controlling their layer number, a key determinant of device performance, has remained elusive. Here, we demonstrate a chemical vapor deposition (CVD) approach for layer-by-layer growth of MoS$\_2$ NRs on a low-symmetry sapphire surface. This approach enables the oriented growth of single-crystalline bilayer NRs with a 2H stacking configuration, while maintaining widths below 20 nm. Increasing the MoO$\_3$ precursor supply was found to be crucial for promoting the growth of the second and subsequent layers. By controlling the growth time and precursor supply, the layer number of MoS$\_2$ NRs can be increased up to four layers. This method can also be extended to the growth of vertical MoS$\_2$/WS$\_2$ hetero-NRs. The average carrier mobility and current density of bilayer NR field-effect transistors (FETs) are two- and three-times higher than those of monolayer counterparts, respectively, and a maximum mobility of 86.7 cm$^2$V$^{-1}$s$^{-1}$ was attained with a bilayer NR-FET. These results highlight layer number as a key parameter for optimizing NR device performance. Our thickness-controlled growth strategy provides a general route towards TMD NR-based transistors with enhanced scalability and performance.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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