# A FeFET Voltage-to-Time Converter with Offset Trim by Programmed Multilevel State in 28-nm CMOS

Preprint · Jeries Mattar, Hanaa Eqeiq, Stefan Dünkel, Halid Mulaosmanovic, Gunda Beernink, Sven Beyer, Nicolás Wainstein

- Archive id: arxiv:2610.05016
- Published: 2026-10-04
- arXiv: https://arxiv.org/abs/2610.05016
- Citations: 0
- Source URL: https://arxiv.org/abs/2610.05016
- PDF: https://arxiv.org/pdf/2610.05016
- Provenance: arxiv

## Abstract

The offset and gain of voltage-to-time converters (VTCs) in time-domain circuits vary with process, supply, and temperature. This work presents a VTC whose nonvolatile input-referred offset trim is the programmed multilevel state of the ferroelectric field-effect transistor (FeFET) that converts the input. Fabricated in 28-nm CMOS, the 6.07-$μ$m$^2$ VTC consists of a current-starved inverter with the FeFET and a parallel NMOS leaker in its tail, a capacitor bank, and a following inverter. The programmed state shifts the transfer curve onto the input range, leaving the gain to the capacitor bank and the leaker bias. Measured at 10~MS/s, centered states weaken the second harmonic from $-$12.5~dB in the low-threshold state to $-$32.2~dB and lower the static integral nonlinearity (INL) at 5~bit from 2.42 to 0.92~LSB. Post-layout simulations indicate that the proposed VTC can operate at 500~MS/s, drawing 2.0~$μ$W from a 0.9-V supply, with nearly unchanged distortion and gain up to 700~MS/s. Across simulated process corners and $\\pm$10\\,\\% supply variation, the input-referred offset is calibrated to within 10~mV and the gain to within 4\\,\\% of nominal by adjusting the programmed state and leaker bias.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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