# Extrinsic Bulk Photovoltaic Effect from Asymmetric Defect Scattering

Preprint · Zixun Wang, Andrew M. Rappe

- Archive id: arxiv:2610.25029
- Published: 2026-10-18
- arXiv: https://arxiv.org/abs/2610.25029
- Citations: 0
- Source URL: https://arxiv.org/abs/2610.25029
- PDF: https://arxiv.org/pdf/2610.25029
- Provenance: arxiv

## Abstract

The extrinsic bulk photovoltaic effect from asymmetric electron-defect scattering can make an important contribution to the total photocurrent and is highly diagnostic of defect type. We present an ab initio Boltzmann framework combining optical excitation with electron-phonon and symmetric and skew electron-defect scattering, and we apply it to monolayer GeS. Because the defects that generate the current also relax the anisotropy that sustains it, the response peaks at a finite defect fraction. Within the scattering-limited model, cooling to $0$~K shifts the peak position toward lower defect fractions and yields a maximum enhancement of more than six orders of magnitude at fixed defect fraction. At selected low-temperature defect fractions, the total extrinsic current can exceed the intrinsic shift current by more than an order of magnitude, so that the defect fraction itself becomes a tunable parameter.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Computational & AI-Driven Superconductor Discovery](https://space-kitty.com/topics/superconductor-discovery)

---
Space Kitty Archive · https://space-kitty.com · API: https://space-kitty.com/api/v1 · MCP: https://space-kitty.com/mcp · Premium: $0.20/request via x402 (Base Sepolia (testnet)). Metadata: arXiv (CC0), OpenAlex (CC0), Europe PMC (CC BY/CC0 works), ClinicalTrials.gov.