# Charge state and hydration of vacancies in silicon and silicon carbide in contact with water: A grand-canonical first-principles stability map

Preprint · Abhirup Patra

- Archive id: arxiv:2610.33469
- Published: 2026-10-24
- arXiv: https://arxiv.org/abs/2610.33469
- Citations: 0
- Source URL: https://arxiv.org/abs/2610.33469
- PDF: https://arxiv.org/pdf/2610.33469
- Provenance: arxiv

## Abstract

The state of a vacancy in a semiconductor is normally described by the Fermi level alone. In wet-etched, electrochemically processed, or humid silicon and silicon carbide, a vacancy also takes up hydrogen and oxygen from water, in amounts set by pH and electrode potential. We treat both effects together by minimizing the grand potential of a vacancy complex over its charge state and hydrogen/oxygen content. The result is a stability map in Fermi level and hydrogen chemical potential, which the computational hydrogen electrode relates to pH and potential. We parameterize it with spin-polarized density functional theory in 64-atom cells, including the vibrational free energy of bound H and O, for the silicon vacancy, its H, O, and OH complexes, and both vacancies of 3C-SiC. Hydrogen binds cooperatively to the silicon vacancy, which goes directly from bare to fully passivated $V$H$\_4$. In contact with water the bare vacancy is never the lowest-energy state. Near neutral pH it binds oxygen from water as the A center, the paramagnetic hydroxyl complex forms below about pH 5 at zero bias, and full passivation to $V$H$\_4$ requires cathodic bias. In PBE the Fermi level barely moves these boundaries, because the acceptor levels lie at or above the conduction-band edge. In SiC the first hydrogen binds to the silicon vacancy by 1.97 eV but is unbound at the carbon vacancy (the $Z\_{1/2}$ center), so hydrogen from water alone should not passivate it except under cathodic bias.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Next-Generation Batteries](https://space-kitty.com/topics/next-gen-batteries)

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