# Amorphization-Depth-Dependent Bismuth Redistribution and Activation in Silicon for Quantum Devices

Preprint · Youcef A. Bioud, Simon-Jean Michel, Sebastien Francoeur, Sjoerd Roorda, Eva Dupont-Ferrier

- Archive id: arxiv:2610.35993
- Published: 2026-10-26
- arXiv: https://arxiv.org/abs/2610.35993
- Citations: 0
- Source URL: https://arxiv.org/abs/2610.35993
- PDF: https://arxiv.org/pdf/2610.35993
- Provenance: arxiv

## Abstract

Near-surface bismuth donors are promising for silicon quantum devices because of their rich electron-nuclear spin structure and long spin coherence, but their electrical activation is strongly influenced by implantation-induced amorphization. We compare redistribution and electrical activation of 20 keV Bi implanted directly into Si and after Si preamorphization. The two routes produce amorphous-layer depths of approximately 47 nm and 177 +/- 15 nm, respectively. After annealing at 650 C for 300 s, Rutherford backscattering spectrometry and channeling reveal comparable substitutional Bi fractions of 91 +/- 2% and 89 +/- 4%, whereas Hall measurements indicate Hall-derived electrical activation yields of approximately 60% and 90%, respectively. Depth-resolved ion-scattering analysis reveals a buried Bi-related feature at or beyond the initial amorphous/crystalline interface, within the end-of-range region, together with increasing surface segregation at higher annealing temperatures. The buried feature is consistent with trapping near residual end-of-range defects. X-ray photoelectron spectroscopy and low-temperature photoluminescence on the Bi-only sample reveal no resolvable Bi-oxide contribution and a donor-related optical signature, respectively. These results show that amorphization depth and regrowth geometry govern Bi redistribution and influence electrical activation beyond substitutional incorporation alone.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Superconducting Quantum Processors](https://space-kitty.com/topics/superconducting-qubits)

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