# Spin Relaxation and Electrical Control of Spin Transport in Few-Layer $T_{\rm d}$-MoTe$_2$

Preprint · T. Wakamura, M. Hashisaka, M. Bard, S. Okazaki, T. Sasagawa, T. Taniguchi, K. Watanabe, K. Muraki, N. Kumada

- Archive id: arxiv:2610.36399
- Published: 2026-10-26
- arXiv: https://arxiv.org/abs/2610.36399
- Citations: 0
- Source URL: https://arxiv.org/abs/2610.36399
- PDF: https://arxiv.org/pdf/2610.36399
- Provenance: arxiv

## Abstract

We report electrical tuning of spin relaxation in atomically thin $T\_{\\rm d}$-MoTe$\_2$, a representative low-symmetry transition metal dichalcogenide. Weak antilocalization measurements reveal strong spin--orbit interaction with spin--orbit lengths of tens of nanometers, consistent with recent theoretical predictions. Despite the semimetallic nature of $T\_{\\rm d}$-MoTe$\_2$, in the ultrathin limit the spin--orbit scattering time can be tuned electrostatically by up to threefold. We further investigate vertical electric field effects on the spin--orbit length and time, and demonstrate the modulation of the Rashba parameters. Relation between spin--orbit scattering time and the diffusion coefficient indicates that spin relaxation is governed by the D'yakonov--Perel' mechanism in both monolayer and bilayer $T\_{\\rm d}$-MoTe$\_2$. These results establish few-layer $T\_{\\rm d}$-MoTe$\_2$ as a platform for electrically tunable spin transport, thereby providing insight into spin relaxation in low-symmetry transition metal dichalcogenides.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [2D Materials & Van der Waals Heterostructures](https://space-kitty.com/topics/2d-materials)

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