# Demonstration of high output power (3.75 W/mm) with 31.8% PAE in Ga-Polar AlGaN/GaN HEMTs on sapphire at 94 GHz

Preprint · Ruixin Bai, Swarnav Mukhopadhyay, Michael Elliott, Ryan Gilbert, Surjava Sanyal, Darryl Shima, Jiahao Chen, Rafael A. Choudhury, Kyudong Kim, Yu-Chun Wang, Ganesh Balakrishnan, Ahmad E. Islam, Andrew J. Green, Shubhra S. Pasayat, Chirag Gupta

- Archive id: arxiv:2610.36492
- Published: 2026-10-27
- Venue: IEEE Microwave and Wireless Technology Letters, 2026
- DOI: https://doi.org/10.1109/lmwt.2026.3736479
- arXiv: https://arxiv.org/abs/2610.36492
- Source URL: https://arxiv.org/abs/2610.36492
- PDF: https://arxiv.org/pdf/2610.36492
- Provenance: arxiv

## Abstract

In this work, a recessed-gate Ga-polar AlGaN/GaN high-electron-mobility transistor (HEMT) on sapphire incorporating an AlGaN back-barrier for W-band operation is demonstrated. The device achieves a subthreshold slope of ~130 mV/dec, a peak transconductance of 0.75 S/mm, and an fmax exceeding 240 GHz. Continuous-wave load-pull measurements at 94 GHz show an output power of 3.75 W/mm with a power-added efficiency of 31.8%. This performance significantly exceeds the best previously reported Ga-polar devices on sapphire and approaches that of state-of-the-art Ga-polar devices on SiC, which provides a promising pathway toward high-performance W-band devices.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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