# Back-End-Of-Line Integration of 2-Terminal Ferroelectric Hafnia Synaptic Weights on Commercial CMOS Process

Preprint · Alexander Flasby, Anwesha Panda, Nathan Savoia, Laura Bégon-Lours

- Archive id: arxiv:2610.37530
- Published: 2026-10-27
- arXiv: https://arxiv.org/abs/2610.37530
- Citations: 0
- Source URL: https://arxiv.org/abs/2610.37530
- PDF: https://arxiv.org/pdf/2610.37530
- Provenance: arxiv

## Abstract

Functionalising the back-end-of-line (BEOL) of CMOS with emerging materials is a key route to neural network accelerators and neuromorphic systems. In this work, we demonstrate for the first time the integration of 2-terminal ferroelectric synaptic weights in the BEOL of as-delivered commercial 180 nm CMOS dies. A novel material stack is proposed, in which a WOx/\[HfO2-ZrO2\] bilayer is sandwiched between TiN and Mo electrodes. For devices annealed at 450 °C, programming below 1.8 V is achieved with a cycle-to-cycle variation below 3 %. Synaptic weights annealed at 500 °C exhibit more gradual weight updates, while the tested underlying NMOS transistors remain functional after the complete integration process. The trade-off between thermal budget and on-device training performance is illustrated using hardware-aware neural network simulations.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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