# Amorphous selenium-alloyed TeOx thin-film solar cells

Preprint · Zhaoheng Ling, Linqu Luo, Chrysa Aivalioti, Temur Maksudov, Mengxi Zhang, Theodoulos Kalogerakis, Lazaros Panagiotidis, Elefterios Lidorikis, Spyros Doukas, Nikolaos Kalfagiannis, Epameinondas Tziortzios, Leonidas Tsetseris, Huihui Zhu, Ao Liu, Yong-Young Noh, Martin Heeney, Shadi Fatayer, Thomas D. Anthopoulos

- Archive id: arxiv:2610.38643
- Published: 2026-10-28
- arXiv: https://arxiv.org/abs/2610.38643
- Source URL: https://arxiv.org/abs/2610.38643
- PDF: https://arxiv.org/pdf/2610.38643
- Provenance: arxiv

## Abstract

Tellurium dioxide (TeO$\_2$) is a wide-bandgap oxide with attractive processing versatility and emerging p-type semiconducting behaviour, making it a promising material system for optoelectronic and photovoltaic applications. However, TeO$\_2$-derived thin films prepared by scalable manufacturing processes, such as vacuum sublimation, can contain residual metallic Te$^0$ species that introduce trap states, limit hole transport, and promote carrier recombination. Here, we demonstrate a selenium alloying strategy to control the defect chemistry of vacuum-sublimed TeO$\_x$ films. TeO$\_2$:Se powder mixtures (90:10~wt\\%) were thermally evaporated and subsequently annealed in air at 225~$^\\circ$C for up to 9~h, yielding amorphous TeO$\_x$:Se films with an optical bandgap of 0.98~eV under optimised conditions. Structural, chemical, optical, and electrical analyses show that prolonged annealing promotes Se redistribution, suppresses residual Te$^0$ to approximately 0.4\\%, reduces the film's surface roughness, and shifts the valence-band edge. To evaluate the potential of TeO$\_x$:Se for photovoltaic applications, we fabricated thin-film solar cells with an ITO/ZnO/TeO$\_x$:Se/MoO$\_x$/Ag architecture. Devices based on an 80~nm TeO$\_x$:Se active layer annealed for 9~h exhibit optimal performance, with broadband photocurrent generation from 300 to 1000~nm, yielding an open-circuit voltage of 0.50~V, a short-circuit current density of 8.50~mA~cm$^{-2}$, a fill factor of 0.44, and a maximum power conversion efficiency of approximately 1.87\\%. These results establish selenium-alloyed TeO$\_x$ as a viable oxide-derived absorber for thin-film photovoltaics and highlight chemical-state control as an effective route for improving photovoltaic performance.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Perovskite & Tandem Photovoltaics](https://space-kitty.com/topics/advanced-photovoltaics)

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