# Electrical transport studies of quench condensed Bi films at the initial stage of film growth: Structural transition and the possible formation of electron droplets

Preprint · M. M. Rosario, Y. Liu

- Archive id: arxiv:cond-mat/0110415
- Published: 2001-10-19
- DOI: https://doi.org/10.1103/physrevb.65.094506
- arXiv: https://arxiv.org/abs/cond-mat/0110415
- Source URL: https://arxiv.org/abs/cond-mat/0110415
- PDF: https://arxiv.org/pdf/cond-mat/0110415
- Provenance: arxiv

## Abstract

The electrical transport properties of amorphous Bi films prepared by sequential quench deposition have been studied in situ. A superconductor-insulator (S-I) transition was observed as the film was made increasingly thicker, consistent with previous studies. Unexpected behavior was found at the initial stage of film growth, a regime not explored in detail prior to the present work. As the temperature was lowered, a positive temperature coefficient of resistance (dR/dT \> 0) emerged, with the resistance reaching a minimum before the dR/dT became negative again. This behavior was accompanied by a non-linear and asymmetric I-V characteristic. As the film became thicker, conventional variable-range hopping (VRH) was recovered. We attribute the observed crossover in the electrical transport properties to an amorphous to granular structural transition. The positive dR/dT found in the amorphous phase of Bi formed at the initial stage of film growth was qualitatively explained by the formation of metallic droplets within the electron glass.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

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