# Quantum Mott transition in a silicon quantum dot

Preprint · S. V. Vyshenski, U. Zeitler, R. J. Haug

- Archive id: arxiv:cond-mat/9802227
- Published: 1998-02-21
- arXiv: https://arxiv.org/abs/cond-mat/9802227
- Citations: 0
- Source URL: https://arxiv.org/abs/cond-mat/9802227
- PDF: https://arxiv.org/pdf/cond-mat/9802227
- Provenance: arxiv

## Abstract

Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide, we derive simple conditions for the conductance of the dot to become a step-like function of the number of doping atoms inside the dot, with negligible dependence on the actual position of the dopants. The found conditions are feasible in experimentally available structures.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Photonic, Spin & Topological Qubits](https://space-kitty.com/topics/photonic-topological-qubits)

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