# Magnetoresistance and conductivity exponents of quench-condensed ultra-thin films of Bi

Preprint · K. Das Gupta, G. Sambandamurthy, V. H. S. Moorthy, N. Chandrasekhar

- Archive id: arxiv:cond-mat/9910018
- Published: 1999-10-02
- arXiv: https://arxiv.org/abs/cond-mat/9910018
- Source URL: https://arxiv.org/abs/cond-mat/9910018
- PDF: https://arxiv.org/pdf/cond-mat/9910018
- Provenance: arxiv

## Abstract

We have studied the magnetoresistance (MR) and evolution of conductivity with thickness of quench-condensed Bismuth films on substrates of various dielectric constants. Our results indicate a negative intial MR proportional to the square of the magnetic field. The conductance shows a power-law kind of dependence on thickness, with an exponent close to 1.33, characterisitic of a 2-D percolating system, only when the films are grown on a thin ($\\sim 10${\\rm Å} Germanium underlayer but not otherwise.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

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