# Triazine‐Based Graphitic Carbon Nitride: a Two‐Dimensional Semiconductor

Article · Gerardo Algara‐Siller, Nikolai Severin, Samantha Yu-ling Chong, Torbjörn Björkman, Robert G. Palgrave, Andrea Laybourn, Markus Antonietti, Yaroslav Z. Khimyak, Arkady V. Krasheninnikov, Jürgen P. Rabe, Ute A. Kaiser, Andrew Ian Cooper, Arne Thomas, Michael J. Bojdys

- Archive id: doi:10.1002/anie.201402191
- Published: 2014-05-18
- Venue: Angewandte Chemie International Edition
- DOI: https://doi.org/10.1002/anie.201402191
- PMID: 24838808
- Citations: 670
- Source URL: https://doi.org/10.1002/anie.201402191
- Provenance: openalex

## Abstract

Graphitic carbon nitride has been predicted to be structurally analogous to carbon-only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine-based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reaction starting with the abundant monomer dicyandiamide. The films consist of stacked, two-dimensional (2D) crystals between a few and several hundreds of atomic layers in thickness. Scanning force and transmission electron microscopy show long-range, in-plane order, while optical spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations corroborate a direct bandgap between 1.6 and 2.0 eV. Thus TGCN is of interest for electronic devices, such as field-effect transistors and light-emitting diodes.

_Abstract reproduced under CC-BY (publisher license, via OpenAlex)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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