# Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

Article · Wenjun Ding, Jianbao Zhu, Zhe Wang, Yanfei Gao, Di Xiao, Yi Gu, Zhenyu Zhang, Wenguang Zhu

- Archive id: doi:10.1038/ncomms14956
- Published: 2017-04-07
- Venue: Nature Communications
- DOI: https://doi.org/10.1038/ncomms14956
- PMID: 28387225
- Citations: 1,458
- Source URL: https://doi.org/10.1038/ncomms14956
- PDF: https://www.nature.com/articles/ncomms14956.pdf
- Provenance: openalex

## Abstract

Abstract Interest in two-dimensional (2D) van der Waals materials has grown rapidly across multiple scientific and engineering disciplines in recent years. However, ferroelectricity, the presence of a spontaneous electric polarization, which is important in many practical applications, has rarely been reported in such materials so far. Here we employ first-principles calculations to discover a branch of the 2D materials family, based on In 2 Se 3 and other III 2 -VI 3 van der Waals materials, that exhibits room-temperature ferroelectricity with reversible spontaneous electric polarization in both out-of-plane and in-plane orientations. The device potential of these 2D ferroelectric materials is further demonstrated using the examples of van der Waals heterostructures of In 2 Se 3 /graphene, exhibiting a tunable Schottky barrier, and In 2 Se 3 /WSe 2 , showing a significant band gap reduction in the combined system. These findings promise to substantially broaden the tunability of van der Waals heterostructures for a wide range of applications.

_Abstract reproduced under CC-BY (publisher license, via OpenAlex)._

Topics: [2D Materials & Van der Waals Heterostructures](https://space-kitty.com/topics/2d-materials)

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