# Synthesis of large-area multilayer hexagonal boron nitride for high material performance

Article · Soo Min Kim, Allen Long Hsu, Min Ho Park, Sang Hoon Chae, Seok Joon Yun, Joo Song Lee, Dae‐Hyun Cho, Wenjing Fang, Changgu Lee, Tomás Palacios, M. S. Dresselhaus, Ki Kang Kim, Young Hee Lee, Jing Kong

- Archive id: doi:10.1038/ncomms9662
- Published: 2015-10-28
- Venue: Nature Communications
- DOI: https://doi.org/10.1038/ncomms9662
- PMID: 26507400
- Citations: 566
- Source URL: https://doi.org/10.1038/ncomms9662
- PDF: https://www.nature.com/articles/ncomms9662.pdf
- Provenance: openalex

## Abstract

Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young's modulus: 1.16 ± 0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ∼ 24,000 cm(2) V(-1) s(-1) at room temperature, higher than that (∼ 13,000 (2) V(-1) s(-1)) with exfoliated h-BN. By placing additional h-BN on a SiO2/Si substrate for a MoS2 (WSe2) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times.

_Abstract reproduced under CC-BY (publisher license, via OpenAlex)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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