# A two-dimensional Fe-doped SnS2 magnetic semiconductor

Article · Bo Li, Tao Xing, Mianzeng Zhong, Le Huang, Na Lei, Jun Zhang, Jingbo Li, Zhongming Wei

- Archive id: doi:10.1038/s41467-017-02077-z
- Published: 2017-11-29
- Venue: Nature Communications
- DOI: https://doi.org/10.1038/s41467-017-02077-z
- PMID: 29208966
- Citations: 425
- Source URL: https://doi.org/10.1038/s41467-017-02077-z
- PDF: https://www.nature.com/articles/s41467-017-02077-z.pdf
- Provenance: openalex

## Abstract

Abstract Magnetic two-dimensional materials have attracted considerable attention for their significant potential application in spintronics. In this study, we present a high-quality Fe-doped SnS2 monolayer exfoliated using a micromechanical cleavage method. Fe atoms were doped at the Sn atom sites, and the Fe contents are ∼2.1%, 1.5%, and 1.1%. The field-effect transistors based on the Fe0.021Sn0.979S2 monolayer show n-type behavior and exhibit high optoelectronic performance. Magnetic measurements show that pure SnS2 is diamagnetic, whereas Fe0.021Sn0.979S2 exhibits ferromagnetic behavior with a perpendicular anisotropy at 2 K and a Curie temperature of ~31 K. Density functional theory calculations show that long-range ferromagnetic ordering in the Fe-doped SnS2 monolayer is energetically stable, and the estimated Curie temperature agrees well with the results of our experiment. The results suggest that Fe-doped SnS2 has significant potential in future nanoelectronic, magnetic, and optoelectronic applications.

_Abstract reproduced under CC-BY (publisher license, via OpenAlex)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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