# Semiconductor Device Frontiers Domain: Materials & Nanotechnology · 220 papers indexed · newest 2026-10-27 Gate-all-around and 2D-channel transistors, backside power delivery, advanced packaging and in-memory and neuromorphic hardware. Key concepts: transistor, gate-all-around, 2D semiconductor transistor, in-memory computing, neuromorphic hardware, memristor, advanced packaging ## Most influential - **[Single-layer MoS2 transistors](https://space-kitty.com/papers/doi:10.1038/nnano.2010.279)**. Branimir Radisavljevic, Aleksandra Rađenović, Jacopo Brivio et al. · 2011 · Nature Nanotechnology (doi:10.1038/nnano.2010.279 · 14,962 citations). Source: - **[Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions](https://space-kitty.com/papers/doi:10.1038/s41586-018-0129-8)**. Yuan Liu, Jian Guo, Enbo Zhu et al. · 2018 · Nature (doi:10.1038/s41586-018-0129-8 · 2,139 citations). Source: - **[Two-dimensional flexible nanoelectronics](https://space-kitty.com/papers/doi:10.1038/ncomms6678)**. Deji Akinwande, Nicholas Petrone, James Hone · 2014 · Nature Communications (doi:10.1038/ncomms6678 · 1,919 citations). Source: - **[Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics](https://space-kitty.com/papers/arxiv:1211.5090)**. Thanasis Georgiou, R. Jalil, Branson D. Belle et al. · 2012 · Nature Nanotechnology (arXiv:1211.5090 · doi:10.1038/nnano.2012.224 · 1,752 citations). Source: > The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional (2D) crystals, which can be assembled in 3D stacks with atomic layer precision. These layered structures have already led to a range of fascinating physical phenomena, and also have been used in demonstrating a prototype field effect tunnelling transistor - a candidate for post-CMOS technology. The range of possible materials which could be incorpo… - **[Integrated Circuits Based on Bilayer MoS 2 Transistors](https://space-kitty.com/papers/arxiv:1208.1078)**. Han Wang, Lili Yu, Yi‐Hsien Lee et al. · 2012 · Nano Letters (arXiv:1208.1078 · doi:10.1021/nl302015v · 1,751 citations). Source: > Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene's advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors and photodetectors made from few-layer MoS2 show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semicond… - **[Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors](https://space-kitty.com/papers/arxiv:1403.0565)**. Michele Buscema, Dirk J. Groenendijk, Sofya I. Blanter et al. · 2014 · Nano Letters (arXiv:1403.0565 · doi:10.1021/nl5008085 · 1,714 citations). Source: > Few-layer black phosphorus, a new elemental 2D material recently isolated by mechanical exfoliation, is a high-mobility layered semiconductor with a direct bandgap that is predicted to strongly depend on the number of layers, from 0.35 eV (bulk) to 2.0 eV (single-layer). Therefore, black phosphorus is an appealing candidate for tunable photodetection from the visible to the infrared part of the spectrum. We study the photoresponse of field-effect transistors (FETs) made of few-layer black phosphorus (3 nm to 8 nm thick), as a function of excitation wavelength, power and frequency. In the dark … - **[Two-dimensional semiconductors for transistors](https://space-kitty.com/papers/doi:10.1038/natrevmats.2016.52)**. Manish Chhowalla, Debdeep Jena, Hua Zhang · 2016 · Nature Reviews Materials (doi:10.1038/natrevmats.2016.52 · 1,676 citations). Source: - **[Silicene field-effect transistors operating at room temperature](https://space-kitty.com/papers/doi:10.1038/nnano.2014.325)**. Li Tao, Eugenio Cinquanta, Daniele Chiappe et al. · 2015 · Nature Nanotechnology (doi:10.1038/nnano.2014.325 · 1,658 citations). Source: - **[Ultralow contact resistance between semimetal and monolayer semiconductors](https://space-kitty.com/papers/doi:10.1038/s41586-021-03472-9)**. Pin‐Chun Shen, Cong Su, Yuxuan Cosmi Lin et al. · 2021 · Nature (doi:10.1038/s41586-021-03472-9 · 1,410 citations). Source: - **[Electrical control of neutral and charged excitons in a monolayer semiconductor](https://space-kitty.com/papers/arxiv:1211.0072)**. Jason Ross, Sanfeng Wu, Hongyi Yu et al. · 2013 · Nature Communications (arXiv:1211.0072 · doi:10.1038/ncomms2498 · 1,590 citations). Source: > Monolayer group VI transition metal dichalcogenides have recently emerged as semiconducting alternatives to graphene in which the true two-dimensionality (2D) is expected to illuminate new semiconducting physics. Here we investigate excitons and trions (their singly charged counterparts) which have thus far been challenging to generate and control in the ultimate 2D limit. Utilizing high quality monolayer molybdenum diselenide (MoSe2), we report the unambiguous observation and electrostatic tunability of charging effects in positively charged (X+), neutral (Xo), and negatively charged (X-) exc… - **[Promises and prospects of two-dimensional transistors](https://space-kitty.com/papers/doi:10.1038/s41586-021-03339-z)**. Yuan Liu, Xidong Duan, Hyeon‐Jin Shin et al. · 2021 · Nature (doi:10.1038/s41586-021-03339-z · 1,368 citations). Source: - **[Atomically Thin Arsenene and Antimonene: Semimetal–Semiconductor and Indirect–Direct Band‐Gap Transitions](https://space-kitty.com/papers/doi:10.1002/anie.201411246)**. Shengli Zhang, Zhong Yan, Yafei Li et al. · 2015 · Angewandte Chemie International Edition (doi:10.1002/anie.201411246 · 1,531 citations). Source: - **[How Good Can Monolayer MoS2 Transistors Be?](https://space-kitty.com/papers/doi:10.1021/nl2018178)**. Youngki Yoon, Kartik Ganapathi, Sayeef Salahuddin · 2011 · Nano Letters (doi:10.1021/nl2018178 · 1,531 citations). Source: - **[Bandgap engineering of two-dimensional semiconductor materials](https://space-kitty.com/papers/doi:10.1038/s41699-020-00162-4)**. Andrey Chaves, Javad G. Azadani, Hussain A. Alsalman et al. · 2020 · npj 2D Materials and Applications (doi:10.1038/s41699-020-00162-4 · 1,306 citations). Source: > Abstract Semiconductors are the basis of many vital technologies such as electronics, computing, communications, optoelectronics, and sensing. Modern semiconductor technology can trace its origins to the invention of the point contact transistor in 1947. This demonstration paved the way for the development of discrete and integrated semiconductor devices and circuits that has helped to build a modern society where semiconductors are ubiquitous components of everyday life. A key property that determines the semiconductor electrical and optical properties is the bandgap. Beyond graphene, recentl… > _Abstract excerpt by Andrey Chaves et al., CC-BY, https://doi.org/10.1038/s41699-020-00162-4; truncated._ - **[Two-dimensional materials for next-generation computing technologies](https://space-kitty.com/papers/doi:10.1038/s41565-020-0724-3)**. Chunsen Liu, Huawei Chen, Shuiyuan Wang et al. · 2020 · Nature Nanotechnology (doi:10.1038/s41565-020-0724-3 · 1,050 citations). Source: ## Newest - **[Demonstration of high output power (3.75 W/mm) with 31.8% PAE in Ga-Polar AlGaN/GaN HEMTs on sapphire at 94 GHz](https://space-kitty.com/papers/arxiv:2610.36492)**. Ruixin Bai, Swarnav Mukhopadhyay, Michael Elliott et al. · 2026 · IEEE Microwave and Wireless Technology Letters, 2026 (arXiv:2610.36492 · doi:10.1109/lmwt.2026.3736479). Source: - **[Cu intercalation and field-driven filament formation in vertically aligned MoS$\_2$ memristors](https://space-kitty.com/papers/arxiv:2610.37152)**. Touko Lehenkari, Hannu-Pekka Komsa · 2026 (arXiv:2610.37152). Source: - **[Back-End-Of-Line Integration of 2-Terminal Ferroelectric Hafnia Synaptic Weights on Commercial CMOS Process](https://space-kitty.com/papers/arxiv:2610.37530)**. Alexander Flasby, Anwesha Panda, Nathan Savoia et al. · 2026 (arXiv:2610.37530). Source: - **[A van der Waals Floating-Gate Platform for Broadband Optoelectronic Neuromorphic Computing](https://space-kitty.com/papers/arxiv:2610.34738)**. Thi Phuong Anh Bach, Sangeun Cho · 2026 (arXiv:2610.34738). Source: - **[Precursor Ratio-Controlled Chloride Vacancies in Lead-Free KCuCl3-x Memristors for Forming-Free Gradual Resistive Switching and Neuromorphic Learning](https://space-kitty.com/papers/arxiv:2610.35436)**. Chinmayee Mandar Mhaskar, Sangeeta Roy Chaudhuri, Ayan Roy Chaudhuri · 2026 (arXiv:2610.35436). Source: - **[NN-Based Transistor Modeling for Ultra-Fast SPICE Simulation and Standard Cell Library Characterization](https://space-kitty.com/papers/arxiv:2610.31024)**. Rodion Novkin, Hussam Amrouch · 2026 (arXiv:2610.31024). Source: - **[Electronic, structural and magnetic properties of goldene nanoribbons](https://space-kitty.com/papers/arxiv:2610.30010)**. Fabrício M. de Vasconcelos, Kleuton A. L. Lima, Paloma V. Silva et al. · 2026 (arXiv:2610.30010). Source: - **[Local learning with imperfect analog synapses](https://space-kitty.com/papers/arxiv:2610.27910)**. Théo Dupuis, Adrien Renaudineau, Guillaume Bourgeois et al. · 2026 (arXiv:2610.27910). Source: - **[Correcting topographic artifacts in three-dimensional ToF-SIMS: A practical guide from data-only reconstruction to correlative AFM](https://space-kitty.com/papers/arxiv:2610.28593)**. Jacob Shusterman, Anton V. Ievlev · 2026 (arXiv:2610.28593). Source: - **[How Memristors Work: A Step-by-Step Guide to the CALM Model](https://space-kitty.com/papers/arxiv:2610.26273)**. Juan Bisquert · 2026 (arXiv:2610.26273). 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