Reply to "Comment on `Floquet Fractional Chern Insulators'"
Adolfo G. Grushin, Álvaro Gómez-León, Titus Neupert
Preprint: not peer reviewed. Results may change in later versions.
Abstract
We respond to the comments expressed by L. D'Alessio in arXiv:1412.3481 on our work "Floquet Fractional Chern Insulators" [Phys. Rev. Lett. 112, 156801 (2014)]. We confirm the central result that the ground state of the effective Hamiltonian is an interacting fractional Chern insulator.
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Record
- Archive ID
- arxiv:1503.02580
- Published
- Mar 9, 2015
- arXiv
- 1503.02580
- Categories
- cond-mat.str-el
- Provenance
- arxiv