Control of excitons in multi-layer van der Waals heterostructures
E. V. Calman, C. J. Dorow, M. M. Fogler, L. V. Butov, S. Hu, A. Mishchenko, A. K. Geim
Preprint: not peer reviewed. Results may change in later versions.
Abstract
We report an experimental study of excitons in a double quantum well van der Waals heterostructure made of atomically thin layers of \Mo* and hexagonal boron nitride (hBN). The emission of neutral and charged excitons is controlled by gate voltage, temperature, and both the helicity and the power of optical excitation.
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Record
- Archive ID
- arxiv:1510.04410
- Published
- Oct 15, 2015
- Updated
- Dec 15, 2015
- Venue
- Appl. Phys. Lett. 108, 101901 (2016)
- DOI
- 10.1063/1.4943204
- arXiv
- 1510.04410
- Categories
- cond-mat.mes-hall
- Provenance
- arxiv