Strong Coupling Cavity QED with Gate-Defined Double Quantum Dots Enabled by a High Impedance Resonator

Anna Stockklauser, Pasquale Scarlino, Jonne Koski, Simone Gasparinetti, Christian Kraglund Andersen, Christian Reichl, W. Wegscheider, Thomas Ihn, K. Ensslin, Andreas J. Wallraff

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Abstract

The strong coupling limit of cavity quantum electrodynamics (QED) implies the capability of a matter-like quantum system to coherently transform an individual excitation into a single photon within a resonant structure. This not only enables essential processes required for quantum information processing but also allows for fundamental studies of matter-light interaction. In this work we demonstrate strong coupling between the charge degree of freedom in a gate-detuned GaAs double quantum dot (DQD) and a frequency-tunable high impedance resonator realized using an array of superconducting quantum interference devices (SQUIDs). In the resonant regime, we resolve the vacuum Rabi mode splitting of size $2g/2π= 238$ MHz at a resonator linewidth $κ/2π= 12$ MHz and a DQD charge qubit dephasing rate of $γ_2/2π= 80$ MHz extracted independently from microwave spectroscopy in the dispersive regime. Our measurements indicate a viable path towards using circuit based cavity QED for quantum information processing in semiconductor nano-structures.

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Record

Archive ID
arxiv:1701.03433
Published
Mar 9, 2017
Updated
Jan 12, 2017
Venue
Physical Review X
DOI
10.1103/physrevx.7.011030
arXiv
1701.03433
Categories
Semiconductor Quantum Structures and Devices
License
cc-by
Provenance
openalex+arxiv

Topics