Large Proximity-Induced Spin Lifetime Anisotropy in Transition Metal Dichalcogenide/Graphene Heterostructures

Talieh S. Ghiasi, Josep Ingla-Aynés, Alexey A. Kaverzin, Bart J. van Wees

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Abstract

Van-der-Waals heterostructures have become a paradigm for designing new materials and devices, in which specific functionalities can be tailored by combining the properties of the individual 2D layers. A single layer of transition metal dichalcogenide (TMD) is an excellent complement to graphene (Gr), since the high quality of charge and spin transport in Gr is enriched with the large spin-orbit coupling of the TMD via proximity effect. The controllable spin-valley coupling makes these heterostructures particularly attractive for spintronic and opto-valleytronic applications. In this work, we study spin precession in a monolayer MoSe2/Gr heterostructure and observe an unconventional, dramatic modulation of the spin signal, showing one order of magnitude longer lifetime of out-of-plane spins (40 ps) compared with that of in-plane spins (3.5 ps). This demonstration of a large spin lifetime anisotropy in TMD/Gr heterostructures, is a direct evidence of induced spin-valley coupling in Gr and provides an accessible route for manipulation of spin dynamics in Gr, interfaced with TMDs.

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Record

Archive ID
arxiv:1708.04067
Published
Aug 14, 2017
Venue
Nano Letters
DOI
10.1021/acs.nanolett.7b03460
arXiv
1708.04067
Categories
cond-mat.mes-hall
Provenance
arxiv

Topics