Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi 2 Te 4

Yujun Deng, Yijun Yu, Meng Zhu Shi, Zhongxun Guo, Zihan Xu, Jing Wang, Xian Hui Chen, Yuanbo Zhang

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Abstract

In a magnetic topological insulator, nontrivial band topology conspires with magnetic order to produce exotic states of matter that are best exemplified by quantum anomalous Hall (QAH) insulators and axion insulators. Up till now, such magnetic topological insulators are obtained by doping topological insulators with magnetic atoms. The random magnetic dopants, however, inevitably introduce disorders that hinder further exploration of quantum effects in the material. Here, we resolve this dilemma by probing quantum transport in MnBi$_2$Te$_4$ thin flake - a topological insulator with intrinsic magnetic order. In this layered van der Waals crystal, the ferromagnetic layers couple anti-parallel to each other, so MnBi$_2$Te$_4$ is an antiferromagnet. A magnetic field, however, aligns all the layers and induces an interlayer ferromagnetic order; we show that a quantized anomalous Hall response emerges in atomically thin MnBi$_2$Te$_4$ under a moderate magnetic field. MnBi$_2$Te$_4$ therefore becomes the first intrinsic magnetic topological insulator exhibiting quantized anomalous Hall effect. The result establishes MnBi$_2$Te$_4$ as an ideal arena for further exploring various topological phenomena.

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Record

Archive ID
arxiv:1904.11468
Published
Jan 23, 2020
Updated
Apr 25, 2019
Venue
Science
DOI
10.1126/science.aax8156
arXiv
1904.11468
PubMed
31974160
Categories
Topological Materials and Phenomena
Provenance
openalex+arxiv

Topics