Transport measurements on van der Waals heterostructures under pressure

Bálint Fülöp, Albin Márffy, Endre Tóvári, Máté Kedves, Simon Zihlmann, David Indolese, Zoltán Kovács-Krausz, Kenji Watanabe, Takashi Taniguchi, Christian Schönenberger, István Kézsmárki, Péter Makk, Szabolcs Csonka

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Abstract

The interlayer coupling, which has a strong influence on the properties of van der Waals heterostructures, strongly depends on the interlayer distance. Although considerable theoretical interest has been demonstrated, experiments exploiting a variable interlayer coupling on nanocircuits are scarce due to the experimental difficulties. Here, we demonstrate a novel method to tune the interlayer coupling using hydrostatic pressure by incorporating van der Waals heterostructure based nanocircuits in piston-cylinder hydrostatic pressure cells with a dedicated sample holder design. This technique opens the way to conduct transport measurements on nanodevices under pressure using up to 12 contacts without constraints on the sample at fabrication level. Using transport measurements, we demonstrate that hexagonal boron nitride capping layer provides a good protection of van der Waals heterostructures from the influence of the pressure medium, and we show experimental evidence of the influence of pressure on the interlayer coupling using weak localization measurements on a TMDC/graphene heterostructure.

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Record

Archive ID
arxiv:2103.14617
Published
Mar 26, 2021
Venue
Journal of Applied Physics
DOI
10.1063/5.0058583
arXiv
2103.14617
Categories
cond-mat.mes-hall, physics.app-ph
Provenance
arxiv

Topics