Buckling of graphene/MoS$_2$ van der Waals heterostructures: the misfit strain effect

Abstract

Van der Waals heterostructures are constructed by stacking different atomic layers and can inherit many novel electronic and optical properties from the constituting atomic layers. Mechanical stability is of key importance for the high performance of nano devices based on the van der Waals heterostructure. In particular, buckling instability is a critical mechanical issue for the heterostructure due to its two-dimensional nature. Using graphene/MoS$_2$ heterostructure as an example, the present work demonstrates the relationship between the buckling instability and the inevitable misfit strain in the heterostructure by molecular dynamics simulations. The misfit strain has rather different effects on the buckling phenomenon depending on the magnitude of the misfit strain. (1) For negative misfit strain, the buckling stability of the heterostructure is reduced by the misfit strain. It is because the graphene layer, which initiates the buckling process in the heterostructure of negative misfit strain, is pre-compressed by the misfit strain that accelerates the buckling of the graphene layer. (2) For small positive misfit strain, the buckling stability for the graphene/MoS$_2$ heterostructure is elevated. The underlying mechanism is that the graphene layer initiates the buckling process of the heterostructure and is pre-stretched by the small positive misfit strain, which decelerates the buckling of the graphene layer. (3) For large positive misfit strain, the graphene layer is pre-stretched while the MoS$_2$ layer is considerably pre-compressed, so the buckling of the heterostructure is initiated by the MoS$_2$ layer. As a consequence, the buckling stability of the graphene/MoS$_2$ heterostructure is reduced by the increase of large positive misfit strain. These findings shall be valuable for understanding mechanical properties of van der Waals heterostructures.

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