Thin-Film Lithium Niobate based Dual-Polarization IQ modulator for Single-Carrier 1.6 Tb/s Transmission
Xuanhao Wang, Chenglin Shang, An Pan, Xingran Cheng, Tao Gui, Shuai Yuan, Chengcheng Gui, Keshuang Zheng, Peijie Zhang, Xiaolu Song, Yanbo Li, Liangchuan Li, Cheng Zeng, Jinsong Xia
Abstract
We successfully demonstrate a monolithic integrated dual-polarization (DP) IQ modulator based on thin-film lithium niobate (TFLN) platform with a silicon substrate, which consists of IQ modulators, spot-size converters (SSCs) and a polarization rotator combiner (PRC). After coupled with polarization maintaining fibers, the measured insertion loss of the modulator is 12 dB. In addition, we experimentally achieve a single-carrier 1.6 Tb/s net bitrate transmission.
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Record
- Archive ID
- arxiv:2201.09730
- Published
- Jan 21, 2022
- Updated
- Apr 21, 2022
- Venue
- APL Photonics
- DOI
- 10.1063/5.0097296
- arXiv
- 2201.09730
- Categories
- physics.app-ph, physics.optics
- Provenance
- arxiv