Gate-tunable Josephson diodes in magic-angle twisted bilayer graphene

A. Rothstein, R. J. Dolleman, L. Klebl, A. Achtermann, F. Volmer, K. Watanabe, T. Taniguchi, F. Hassler, L. Banszerus, B. Beschoten, C. Stampfer

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Abstract

We report low-temperature measurements of two adjacent, gate-defined Josephson junctions (JJs) in magic-angle twisted bilayer graphene (MATBG) at a moiré filling factor near $ν= -2$. We show that both junctions exhibit a prominent, gate-tunable Josephson diode effect, which we explain by a combination of large kinetic inductance and non-uniform supercurrent distribution. Despite their proximity, the JJs display differences in their interference patterns and different diode behavior, underscoring that microscopic inhomogeneities such as twist angle variations shape the non-uniform supercurrent and drive the diode behavior. As a result, the nonreciprocal supercurrent can be tuned by gate voltage, enabling tuning of the diode efficiency and even reversing the polarity at fixed magnetic fields. Our findings offer potential routes for tailoring Josephson diode performance in superconducting quantum circuits.

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Record

Archive ID
arxiv:2510.15503
Published
Oct 17, 2025
Venue
Nano Letters
DOI
10.1021/acs.nanolett.5c05554
arXiv
2510.15503
Categories
cond-mat.mes-hall, cond-mat.mtrl-sci
Provenance
arxiv

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