Fundamental Phase Noise in Thin Film Lithium Niobate Resonators

Abstract

Fundamental phase noise in thin-film lithium niobate (TFLN) photonic integrated circuits is governed by thermal-charge-carrier-refractive (TCCR) dynamics arising from thermally driven carrier fluctuations. In contrast to the predominantly thermorefractive noise in silicon photonic platforms, TCCR noise represents a distinct mechanism that becomes critical for applications requiring high frequency stability and phase coherence, including optomechanical sensing, low-phase-noise microwave synthesis, and on-chip quantum squeezing. A quantitative understanding of the deterministic parameters that control TCCR noise is therefore essential for engineering the next generation of low-noise TFLN photonic systems. Here, we identify two dominant contributors to the TCCR noise in TFLN microresonators: material anisotropy and surface states. Material anisotropy results in increased noise for extraordinarily polarized optical modes and leads to a geometry dependent phase noise. Surface-state effects manifest as increased noise in higher-order transverse modes as well as more than 120-fold higher noise in suspended microresonators. Finally, we demonstrate that post-fabrication annealing -- widely used to reduce defect densities and recover crystal quality -- suppresses frequency noise by a factor of 8.2 in cladded microresonators. Together, these results establish a practical pathway for noise engineering in TFLN integrated photonic devices and accelerate their deployment in next-generation precision photonic systems.

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