Molecular Doping of MoS$_2$ with N-Heterocyclic Carbenes: A Raman Study of Interfacial Charge Transfer

Abstract

We demonstrate efficient electron doping of exfoliated MoS$_2$ through the deposition of N-heterocyclic carbene (NHC) molecules onto its surface. Raman spectroscopy reveals a pronounced softening of the optical A$_{1g}$ phonon mode after NHC deposition, consistent with electron transfer from the NHC molecules to the MoS$_2$ layers. The largest phonon-energy shifts are observed in monolayer and bilayer flakes whereas changes in bulk-like MoS$_2$ are negligible, indicating that the doping efficiency depends on the number of layers. This thickness dependence highlights the dominant role of interfacial charge transfer at the NHC/MoS$_2$ interface. Quantitative analysis of the Raman modes of as-exfoliated and NHC-covered MoS$_2$, together with comparison with literature values, allows us to estimate an increase in the two-dimensional electron density of about two-orders of magnitude in MoS$_2$ mono- and bilayers. These results demonstrate that NHC-based surface deposition is a promising approach for chemically tuning the carrier density of semiconducting transition-metal dichalcogenides and provide a potential route toward molecularly tunable two-dimensional electronic devices, in which, analogous to modulation doping, the donors reside outside the semiconductor lattice.

Abstract: arXiv descriptive metadata (CC0). Thank you to arXiv for use of its open access interoperability. This service was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv.