Reaction-induced Localized Annealing for On-chip Materials Discovery

Nensi Toncich, Nerea Abando, Henning Galinski, Frans Spaepen, Ralph Spolenak

Preprint: not peer reviewed. Results may change in later versions.

Abstract

On-chip thermal processing is a key technology for materials discovery across all disciplines of the natural sciences. Here, we present a microfabricated heat-delivery platform that enables reaction-induced localized on-chip annealing up to 1400°C. A buried reactive multilayer combined with a nanometric diffusion barrier provide ultra-fast heating and quenching rates on the order of 10$^6$°C s$^{-1}$ as illustrated by the generation of ultra-high aspect ratio microstructures during rapid-solidification and the stabilization of dopant-free tetragonal zirconia at room temperature. Rapid kinetics also enable the observation of transient states of capillary-driven hole collapse in melts. Our work expands localized high-temperature processing routes and offers a material-independent approach for rapid screening of multidimensional nanomaterials on and off-equilibrium.

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Record

Archive ID
arxiv:2610.27355
Published
Oct 19, 2026
arXiv
2610.27355
Categories
cond-mat.mtrl-sci, physics.app-ph
Provenance
arxiv

Topics