Amorphization-Depth-Dependent Bismuth Redistribution and Activation in Silicon for Quantum Devices

Abstract

Near-surface bismuth donors are promising for silicon quantum devices because of their rich electron-nuclear spin structure and long spin coherence, but their electrical activation is strongly influenced by implantation-induced amorphization. We compare redistribution and electrical activation of 20 keV Bi implanted directly into Si and after Si preamorphization. The two routes produce amorphous-layer depths of approximately 47 nm and 177 +/- 15 nm, respectively. After annealing at 650 C for 300 s, Rutherford backscattering spectrometry and channeling reveal comparable substitutional Bi fractions of 91 +/- 2% and 89 +/- 4%, whereas Hall measurements indicate Hall-derived electrical activation yields of approximately 60% and 90%, respectively. Depth-resolved ion-scattering analysis reveals a buried Bi-related feature at or beyond the initial amorphous/crystalline interface, within the end-of-range region, together with increasing surface segregation at higher annealing temperatures. The buried feature is consistent with trapping near residual end-of-range defects. X-ray photoelectron spectroscopy and low-temperature photoluminescence on the Bi-only sample reveal no resolvable Bi-oxide contribution and a donor-related optical signature, respectively. These results show that amorphization depth and regrowth geometry govern Bi redistribution and influence electrical activation beyond substitutional incorporation alone.

Abstract: arXiv descriptive metadata (CC0). Thank you to arXiv for use of its open access interoperability. This service was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv.