Spin Relaxation and Electrical Control of Spin Transport in Few-Layer $T_{\rm d}$-MoTe$_2$

Abstract

We report electrical tuning of spin relaxation in atomically thin $T_{\rm d}$-MoTe$_2$, a representative low-symmetry transition metal dichalcogenide. Weak antilocalization measurements reveal strong spin--orbit interaction with spin--orbit lengths of tens of nanometers, consistent with recent theoretical predictions. Despite the semimetallic nature of $T_{\rm d}$-MoTe$_2$, in the ultrathin limit the spin--orbit scattering time can be tuned electrostatically by up to threefold. We further investigate vertical electric field effects on the spin--orbit length and time, and demonstrate the modulation of the Rashba parameters. Relation between spin--orbit scattering time and the diffusion coefficient indicates that spin relaxation is governed by the D'yakonov--Perel' mechanism in both monolayer and bilayer $T_{\rm d}$-MoTe$_2$. These results establish few-layer $T_{\rm d}$-MoTe$_2$ as a platform for electrically tunable spin transport, thereby providing insight into spin relaxation in low-symmetry transition metal dichalcogenides.

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