Converting a superseded Raith electron beam pattern generator into an unattended Critical Dimension SEM

Abstract

Design-based metrology of academic electron beam lithography (EBL) is bottlenecked by low-throughput imaging. For integrated photonics, where nanometre-scale structural variation can significantly limit device performance, scanning electron microscopy (SEM) is the standard tool for critical dimension (CD) metrology, revealing the structure of devices that is not available from optical measurements. Manual SEM imaging on a wafer-scale is time-intensive, can feature operator-dependent distortions, and yields too few data to reliably close the nanofabrication calibration loop. The following details a methodology that utilises existing hardware in an academic cleanroom: a GDSII-to-SEM software workflow that converts a facility's superseded pattern generator into a CD-SEM for unattended image acquisition and efficient CD and line edge roughness (LER) extraction. This is shown for a Raith eLine Plus, and is expected to be applicable to other pattern generators running Raith's NanoSuite. Presented are results demonstrating its three use cases within a facility: accelerated calibration of two photoresists' process windows; chip-scale metrology of integrated photonic devices to track CD variation; and mass dataset acquisition for convolutional neural network training to predict process distortion. This methodology enables foundry-style, metrology-driven process calibration in academic cleanrooms, generalisable beyond photonics to any EBL nanofabrication that requires nanometre-scale CD control.

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