Quantum Mott transition in a silicon quantum dot
S. V. Vyshenski, U. Zeitler, R. J. Haug
Preprint: not peer reviewed. Results may change in later versions.
Abstract
Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide, we derive simple conditions for the conductance of the dot to become a step-like function of the number of doping atoms inside the dot, with negligible dependence on the actual position of the dopants. The found conditions are feasible in experimentally available structures.
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Record
- Archive ID
- arxiv:cond-mat/9802227
- Published
- Feb 21, 1998
- arXiv
- cond-mat/9802227
- Categories
- cond-mat.mes-hall
- Provenance
- arxiv