Decoherence in a single trapped ion due to engineered reservoir

X. X. Yi, D. L. Zhou, C. P. Sun

Preprint: not peer reviewed. Results may change in later versions.

Abstract

The decoherence in trapped ion induced by coupling the ion to the engineered reservoir is studied in this paper. The engineered reservoir is simulated by random variations in the trap frequency, and the trapped ion is treated as a two-level system driven by a far off-resonant plane wave laser field. The dependence of the decoherence rate on the amplitude of the superposition state is given.

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Record

Archive ID
arxiv:quant-ph/0004068
Published
Apr 18, 2000
Venue
J. Opt. B: Quantum Semiclass. Opt., 3(2001)1.
DOI
10.1088/1464-4266/3/1/301
arXiv
quant-ph/0004068
Categories
quant-ph
Provenance
arxiv