Abstract
The memory resistor abbreviated memristor was a harmless postulate in 1971. In the decade since 2008, a device claiming to be the missing memristor is on the prowl, seeking recognition as a fundamental circuit element, sometimes wanting electronics textbooks to be rewritten, always promising remarkable digital, analog and neuromorphic computing possibilities. A systematic discussion about the fundamental nature of the device is almost universally absent. This report investigates the assertion that the memristor is a fundamental passive circuit element, from the perspective that electrical engineering is the science of charge management. With a periodic table of fundamental elements, we demonstrate that there can only be three fundamental passive circuit elements. The ideal memristor is shown to be an unphysical active device. A vacancy transport model further reveals that a physically realizable memristor is a nonlinear composition of two resistors with active hysteresis.
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Record
- Archive ID
- arxiv:1808.05982
- Published
- Aug 17, 2018
- Venue
- Scientific Reports volume 8, Article number: 10972 (2018)
- DOI
- 10.1038/s41598-018-29394-7
- arXiv
- 1808.05982
- Categories
- cs.ET, physics.app-ph
- Provenance
- arxiv