Semiconductor Device Frontiers
Gate-all-around and 2D-channel transistors, backside power delivery, advanced packaging and in-memory and neuromorphic hardware.
Most influential
- Single-layer MoS2 transistorsArticle14,962 citationsdoi:10.1038/nnano.2010.279
- Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctionsArticle2,139 citationsdoi:10.1038/s41586-018-0129-8
- Two-dimensional flexible nanoelectronicsArticle1,919 citationsdoi:10.1038/ncomms6678
- Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics
The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional (2D) crystals, which can be assembled in 3D stacks with atomic layer precision. These layered structures have …
Article1,752 citationsarXiv:1211.5090doi:10.1038/nnano.2012.224 - Integrated Circuits Based on Bilayer MoS 2 Transistors
Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene's advantages for electronic and optoelectronic applications. Discrete electronic an…
Article1,751 citationsarXiv:1208.1078doi:10.1021/nl302015v - Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors
Few-layer black phosphorus, a new elemental 2D material recently isolated by mechanical exfoliation, is a high-mobility layered semiconductor with a direct bandgap that is predicted to strongly depend on the number of layers, from 0.35 eV (bulk) to 2.0 eV (single-layer). Therefore, black phosphorus is an appealing candidate for tunable photodetection from th…
Article1,714 citationsarXiv:1403.0565doi:10.1021/nl5008085 - Two-dimensional semiconductors for transistorsReview1,676 citationsdoi:10.1038/natrevmats.2016.52
- Silicene field-effect transistors operating at room temperatureArticle1,658 citationsdoi:10.1038/nnano.2014.325
- Ultralow contact resistance between semimetal and monolayer semiconductorsArticle1,410 citationsdoi:10.1038/s41586-021-03472-9
- Electrical control of neutral and charged excitons in a monolayer semiconductor
Monolayer group VI transition metal dichalcogenides have recently emerged as semiconducting alternatives to graphene in which the true two-dimensionality (2D) is expected to illuminate new semiconducting physics. Here we investigate excitons and trions (their singly charged counterparts) which have thus far been challenging to generate and control in the ult…
Article1,590 citationsarXiv:1211.0072doi:10.1038/ncomms2498 - Promises and prospects of two-dimensional transistorsReview1,368 citationsdoi:10.1038/s41586-021-03339-z
- Atomically Thin Arsenene and Antimonene: Semimetal–Semiconductor and Indirect–Direct Band‐Gap TransitionsArticle1,531 citationsdoi:10.1002/anie.201411246
- How Good Can Monolayer MoS2 Transistors Be?Article1,531 citationsdoi:10.1021/nl2018178
- Bandgap engineering of two-dimensional semiconductor materials
Abstract Semiconductors are the basis of many vital technologies such as electronics, computing, communications, optoelectronics, and sensing. Modern semiconductor technology can trace its origins to the invention of the point contact transistor in 1947. This demonstration paved the way for the development of discrete and integrated semiconductor devices and…
Abstract excerpt by Andrey Chaves et al., CC-BY, https://doi.org/10.1038/s41699-020-00162-4; truncated.
Article1,306 citationsdoi:10.1038/s41699-020-00162-4 - Two-dimensional materials for next-generation computing technologiesReview1,050 citationsdoi:10.1038/s41565-020-0724-3
Newest work
- Demonstration of high output power (3.75 W/mm) with 31.8% PAE in Ga-Polar AlGaN/GaN HEMTs on sapphire at 94 GHzPreprintarXiv:2610.36492doi:10.1109/lmwt.2026.3736479
- Cu intercalation and field-driven filament formation in vertically aligned MoS$_2$ memristorsPreprintarXiv:2610.37152
- Back-End-Of-Line Integration of 2-Terminal Ferroelectric Hafnia Synaptic Weights on Commercial CMOS ProcessPreprintarXiv:2610.37530
- A van der Waals Floating-Gate Platform for Broadband Optoelectronic Neuromorphic ComputingPreprintarXiv:2610.34738
- Precursor Ratio-Controlled Chloride Vacancies in Lead-Free KCuCl3-x Memristors for Forming-Free Gradual Resistive Switching and Neuromorphic LearningPreprintarXiv:2610.35436
- NN-Based Transistor Modeling for Ultra-Fast SPICE Simulation and Standard Cell Library CharacterizationPreprintarXiv:2610.31024
- Electronic, structural and magnetic properties of goldene nanoribbonsPreprintarXiv:2610.30010
- Local learning with imperfect analog synapsesPreprintarXiv:2610.27910
- Correcting topographic artifacts in three-dimensional ToF-SIMS: A practical guide from data-only reconstruction to correlative AFMPreprintarXiv:2610.28593
- How Memristors Work: A Step-by-Step Guide to the CALM ModelPreprintarXiv:2610.26273