Demonstration of high output power (3.75 W/mm) with 31.8% PAE in Ga-Polar AlGaN/GaN HEMTs on sapphire at 94 GHz

Abstract

In this work, a recessed-gate Ga-polar AlGaN/GaN high-electron-mobility transistor (HEMT) on sapphire incorporating an AlGaN back-barrier for W-band operation is demonstrated. The device achieves a subthreshold slope of ~130 mV/dec, a peak transconductance of 0.75 S/mm, and an fmax exceeding 240 GHz. Continuous-wave load-pull measurements at 94 GHz show an output power of 3.75 W/mm with a power-added efficiency of 31.8%. This performance significantly exceeds the best previously reported Ga-polar devices on sapphire and approaches that of state-of-the-art Ga-polar devices on SiC, which provides a promising pathway toward high-performance W-band devices.

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