Modular memristor model with synaptic-like plasticity and volatile memory

Abstract

Compact models of memristors are essential for simulating large-scale neuromorphic systems, yet they often do not include description of complex dynamics like volatile relaxation and synaptic plasticity. We introduce a modular, computationally efficient memristor model that bridges this gap by integrating principles from physics and computational neuroscience. The model defines a framework consisting of a standard formulation of memristive device dynamics, a functional rule mapping state variables to cumulative conductance, a volatility module inspired by the theory of linear viscoelasticity and a saturation module implementing a linear-nonlinear technique. Additionally, we develop a formulation of synaptic-like plasticity inspired by a biological spike-timing-dependent plasticity (STDP) rule, which is compatible with the general framework for memristive devices. Finally, we propose a Laplace transform-based technique to derive the precise form of the mapping from state variables to cumulative conductance, replacing ad hoc voltage-current relationships with principled construction. We quantitatively validate the complete model against a rich set of experimental data from polymeric memristors exhibiting potentiation, synaptic-like plasticity and volatile decay. Our work presents a new paradigm for memristor modeling that is both practical for large-scale simulation and rich in explanatory power, providing a principled tool for the design of next-generation neuromorphic hardware.

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